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Czochralski process - Wikipedia, the free encyclopedia
The Czochralski process is a method of crystal growth used to obtain single ... The process is named after Polish scientist Jan Czochralski, who discovered the ...
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Czochralski process ( ch??krälsk? ?präs?s ) ( crystallography ) A method of producing large single crystals by inserting a small seed crystal of
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Energy Citations Database (ECD) - - Document #6280529
A Czochralski crystal growing furnace was converted to a continuous growth ... Continuous Czochralski process development. LSSA large area silicon sheet task. ...
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Solar Energy Technologies Program: Silicon
In the Czochralski process, a seed crystal is dipped into a crucible of molten ... float-zone process produces purer crystals than the Czochralski method, because ...
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Photovoltaic Materials - Silicon
Single crystal silicon is the most popular material for photovaoltaic cells, due ... In the Czochralski process, a seed crystal is dipped into a crucible of molten ...
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Single Crystal Growth for Wafer Production
... single-crystal silicon from this EGS either by Czochralski or Float Zone process. ... See also: Float Zone Process; Specifications for Si Wafers; Crystal Defects; ...
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Czochralski process - Info
Encyclopedia Business Information ... Czochralski process. The Czochralski process is a method of crystal growth used to obtain large ...
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Category:Czochralski method. From Wikimedia Commons, ... Czochralski Process ... 32,713 bytes. Czochralski method c... 619,008 bytes. Czochralski method t...
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Single Crystal Growth for Wafer Production - Page 2
The float zone (FZ) process is another method for growing single-crystal silicon. ... for Si Wafers; Wafers for Wafer Fab; Czochralski Process; Float Zone Process; ...
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The Czochralski process is a method of crystal growth used to obtain single crystals of semiconductors (e.g. silicon, germanium and gallium arsenide), metals (e.g. palladium, platinum, silver, gold), salts and some man made, (or "lab") gemstones.

The most important application may be the growth of large cylindrical ingots, or boule (crystal), of single crystal silicon. High-purity, semiconductor-grade silicon (only a few parts per million of impurities) is melted down in a crucible , which is usually made of quartz. Dopant impurity atoms such as boron or phosphorus can be added to the molten intrinsic silicon in precise amounts in order to dope the silicon, thus changing it into n-type or p-type extrinsic silicon. This influences the electrical conductivity of the silicon. A seed crystal, mounted on a rod, is dipped into the molten silicon. The seed crystal's rod is pulled upwards and rotated at the same time. By precisely controlling the temperature gradients, rate of pulling and speed of rotation, it is possible to extract a large, single-crystal, cylindrical ingot from the melt. This process is normally performed in an inert atmosphere, such as argon, and in an inert chamber, such as quartz.

While the largest silicon ingots produced today are 400 millimetre in diameter and 1 to 2 metres in length, 200 mm and 300 mm diameter crystals are standard industrial processes. Thin silicon wafer (electronics)s are cut from these ingots (typically about 0.2 - 0.75 mm thick) and can be polished to a very high flatness for making integrated circuits, or textured for making solar cells. Other semiconductors, such as gallium arsenide, can also be grown by this method, although lower defect densities in this case can be obtained using variants of the Bridgeman technique.

When silicon is grown by the Czochralski method the melt is contained in a silica (quartz) crucible. During growth the walls of the crucible dissolve into the melt and Czochralski silicon therefore contains oxygen impurities with a typical concentration of 10^{18}cm^{-3}. Perhaps surprisingly, oxygen impurities can have beneficial effects. Carefully chosen annealing conditions can allow the formation of oxygen precipitates. These have the effect of trapping unwanted transition metal impurities in a process known as gettering. Additionally, oxygen impurities can improve the mechanical strength of silicon wafers by immobilising any dislocations which may be introduced during device processing. It has experimentally been proved in the 1990s that the high oxygen concentration is also beneficial for radiation hardness of silicon particle detectors used in harsh radiation environment ( eg. CERN's LHC/S-LHC projects)Z. Li et al., IEEE Trans Nucl. Sci. 39 (6) (1992) 1730A. Ruzin et al., IEEE Trans Nucl. Sci. 46 (5) (1999) 1310G. Lindström et al., Nucl. Instr. and Meth. A 466 (2001) 308 and cited literature therein. Therefore, radiation detectors made of Czochralski- and Magnetic Czochralski-silicon are considered to be promising candidates for many future high-energy physics experiments.CERN RD50 Status Report 2004, CERN-LHCC-2004-031 and LHCC-RD-005 and cited literature thereinJ. Härkönen et al., Nucl. Instr. and Meth. A 541 (2005)202. However, oxygen impurities can react with boron in an illuminated environment, such as experienced by solar cells. This results in the formation of an electrically active boron–oxygen complex that detracts from cell performance. Module output drops by approximately 3% during the first few hours of light exposure. Eikelboom, J.A., Jansen, M.J., 2000. Characteristion of PV modules of new generations; results of tests and simulations. Report ECN-C-00-067, 18.

Occurrence of unwanted instabilities in the melt can be avoided by investigating and visualizing the temperature and velocity fields during the crystal growth process.J. Aleksic et al., Ann. of NY Academy of Sci. 972 (2002) 158.

The process is named after Polish scientist Jan Czochralski, who discovered the method in 1916 while investigating the crystallization rates of metals.

Gallery Image:Czochralski method crucibles.jpg|Crucibles used in Czochralski methodImage: Czochralski method used crucible 1.jpg|Crucible after being usedImage:Monokristalines Silizium für die Waferherstellung.jpg|Silicon ingot

References

See also

• Bridgeman technique
• Float-zone silicon
• Czochralski doping process

Czochralski process - Wikipedia, the free encyclopedia
The Czochralski process is a method of crystal growth used to obtain single crystals of semiconductors (e.g. silicon, germanium and gallium arsenide), metals (e.g. palladium ...

Category:Czochralski method - Wikimedia Commons
Media in category "Czochralski method" The following 16 files are in this ... Czochralski Process ... 36,872 bytes

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Jan Czochralski - Wikipedia, the free encyclopedia
Jan Czochralski (pronounced cho-HRAL-skee) (October 23, 1885 - April 22, 1953) was a Polish chemist who invented the Czochralski process, which is used to grow single crystals and ...

Czochralski process - ArticleWorld
The Czochralski process is a technique for growing crystals in order to obtain solitary crystals of semiconductors like silicon, metals like silver and gold as well as several ...

Czochralski Process
Czochralski Process: The Verneuil has some draw-backs for some ruby uses. It tends to produce crystals with high internal strain. Another method needed to be developed that could ...

INEX: Wikipedia, the free encyclopedia (Czochralski process)
The Czochralski process is a method of crystal growth used to obtain single crystal s of semiconductors (e.g. silicon , germanium and gallium arsenide ), metals (e.g ...

Czochralski Crystal Growth Process
You start growing a "Czochralski crystal" by filling a suitable crucible with the material - here hyperpure correctly doped Si pieces obtained by crushing the poly-Si from the ...

(WO/1990/004054) PROCESS AND DEVICE FOR PULLING CRYSTALS ACCORDING TO ...
wo/1990/004054) process and device for pulling crystals according to the czochralski method

Czochralski process: Definition and Much More from Answers.com
Czochralski process ( chə′krälskē ′präsəs ) ( crystallography ) A method of producing large single crystals by inserting a small seed crystal of